* d by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the o
IRF8113GPbF Datasheet (283.60 KB)
IRF8113GPbF
International Rectifier
283.60 KB
Power mosfet.
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Le.
📁 Related Datasheet
IRF8113 Power MOSFET (International Rectifier)
IRF8113PbF Power MOSFET (International Rectifier)
IRF8113PBF-1 Power MOSFET (International Rectifier)
IRF8010 HEXFET Power MOSFET (International Rectifier)
IRF8010 N-Channel MOSFET (INCHANGE)
IRF8010L SMPS MOSFET (International Rectifier)
IRF8010L N-Channel MOSFET (INCHANGE)
IRF8010LPBF HEXFET Power MOSFET (International Rectifier)
IRF8010PBF HEXFET Power MOSFET (International Rectifier)
IRF8010S SMPS MOSFET (International Rectifier)
