IRF8113GPbF Datasheet - International Rectifier

IRF8113GPbF Power MOSFET

Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free l Halogen-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG PD - 96251 IRF8113GPbF VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg Typ. :5.6m @VGS = 10V 24nC S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to.

IRF8113GPbF Features

* d by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the o

IRF8113GPbF Datasheet (283.60 KB)