* of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety o
IRF9952QPBF Datasheet (303.40 KB)
IRF9952QPBF
International Rectifier
303.40 KB
Power mosfet.
PD - 96115 IRF9952QPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Ta.
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