IRF9956 Power MOSFET

International Rectifier

Description

PD - 91559B IRF9956 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRF9956
Manufacturer: International Rectifier
File Size: 161.70 KB
Datasheet: IRF9956_InternationalRectifier.pdf
Description: Power MOSFET

Applications

* HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS = 30V RDS(on) = 0.10Ω Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and

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IRF9956 Power MOSFET International Rectifier

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