IRF9956PBF Datasheet - International Rectifier

IRF9956PBF HEXFET Power MOSFET

SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA =.

PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.10Ω 3 6 4 5 Top View Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l.

IRF9956PBF Datasheet (172.93 KB)