Datasheet Specifications
- Part number
- IRF9953
- Manufacturer
- International Rectifier
- File Size
- 107.40 KB
- Datasheet
- IRF9953_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 9.1560A PRELIMINARY l l l l l l IRF9953 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface.
Features
* Bldg. , 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www. irf. com/ Data and specifications subject to change without notice. 8/97Applications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package iIRF9953 Distributors
📁 Related Datasheet
📌 All Tags