IRFB4127PBF Datasheet - International Rectifier

IRFB4127PBF Power MOSFET

PD -97136A Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free IRFB4127PbF HEXFET® Power MOSFET D VDSS 200V RDS(on) typ. 17m: max. 20m: S ID 76A DS G TO-220AB G Gate D Drain S Source Abs.

IRFB4127PBF Features

* cuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to

IRFB4127PBF Datasheet (287.75 KB)