IRFB4410ZPbF Datasheet - International Rectifier

IRFB4410ZPbF HEXFET Power MOSFET

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 7.2m: :G max. 9.0m S ID (Sil.

IRFB4410ZPbF Features

* Pulse) Avalanche Current (A) 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 1.0E-02 1.0E-01 EAR , Avalanche Energy (mJ) 150 TOP Single Pu

IRFB4410ZPbF Datasheet (346.86 KB)