Datasheet4U Logo Datasheet4U.com

IRFC2907B Datasheet - International Rectifier

IRFC2907B HEXFET Power MOSFET

Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, I.

IRFC2907B Datasheet (47.00 KB)

Preview of IRFC2907B PDF

Datasheet Details

Part number:

IRFC2907B

Manufacturer:

International Rectifier

File Size:

47.00 KB

Description:

Hexfet power mosfet.

📁 Related Datasheet

IRFC240 HEXFET Power MOSFET (International Rectifier)

IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series (IXYS Corporation)

IRFC150 High Voltage Power MOSFET (IXYS Corporation)

IRFC350 N-Channel MOSFET (IXYS Corporation)

IRFC450 HIGH VOLTAGE POWER MOSFET (IXYS Corporation)

IRFC9110 P-Channel Power MOSFET (IRF)

IRFC9110 P-Channel Power MOSFET (Intersil Corporation)

IRF-24 Inductors (Vishay)

TAGS

IRFC2907B HEXFET Power MOSFET International Rectifier

IRFC2907B Distributor