Datasheet Specifications
- Part number
- IRFG5210
- Manufacturer
- International Rectifier
- File Size
- 217.24 KB
- Datasheet
- IRFG5210_InternationalRectifier.pdf
- Description
- Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
Description
www.DataSheet4U.com PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY ® Product Summa.
Features
* n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS =± 10V, TC = 25°C Continuous Drain Current ID @ VGS =± 10V, TC = 100°C Continuous Drain Current IDM PD @ TC =Applications
* such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the deIRFG5210 Distributors
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