IRFG5210 - Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY

International Rectifier

Datasheet Details

Part number	IRFG5210
Manufacturer	International Rectifier
File Size	217.24 KB
Description	Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
Datasheet	IRFG5210_InternationalRectifier.pdf

n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS =± 10V, TC = 25°C Continuous Drain Current ID @ VGS =± 10V, TC = 100°C Continuous Drain Current IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ➀ Repetitive Avalanche.

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Published: Jan 27, 2007 |