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IRFH6200TRPBF Power MOSFET

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Description

VDS RDS(on) max (@VGS = 4.5V) (@VGS = 2.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 20 0.99 1.50 155 1.3 h100 V mΩ nC Ω A Applications *.

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Features

* Low RDSon (≤ 0.99mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free IRFH6200TRPbF HEXFET® Power MOSFET PQFN 5X6 mm results in ⇒ Benefits Lower Conduction Losses Enable better

Applications

* Charge and discharge switch for battery application
* Load switch for 12V (typical) bus

IRFH6200TRPBF Distributors

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