IRFH4209DPBF Datasheet, Mosfet, International Rectifier

IRFH4209DPBF Features

• Mosfet Low RDS(ON) (<1.10 m) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.0°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing

PDF File Details

Part number:

IRFH4209DPBF

Manufacturer:

International Rectifier

File Size:

483.13kb

Download:

📄 Datasheet

Description:

Power mosfet. Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommod

IRFH4209DPBF Application

• Applications
• Synchronous Rectifier MOSFET for Synchronous Buck Converters FastIRFET™ IRFH4209DPbF HEXFET® Power MOSFET   PQFN 5X6 mm Fea

TAGS

IRFH4209DPBF

International Rectifier

📁 Related Datasheet

IRFH4201 - Power MOSFET (Infineon)
IRFH4201PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 V m.

IRFH4201PbF - Power MOSFET (Infineon)
IRFH4201PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 V m.

IRFH4201PbF - Power MOSFET (International Rectifier)
IRFH4201PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 nC A PQF.

IRFH4210DPbF - Power MOSFET (International Rectifier)
FastIRFET™ IRFH4210DPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 37.0 10.

IRFH4210PbF - Power MOSFET (International Rectifier)
FastIRFET™ IRFH4210PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35  245.

IRFH4213DPbF - Power MOSFET (International Rectifier)
IRFH4213DPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 25 100 nC A PQFN 5.

IRFH4213PbF - Power MOSFET (International Rectifier)
FastIRFET™ IRFH4213PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 26 204 .

IRFH4226PBF - Power MOSFET (International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 2.4 3.3 16 70 V m nC A   Applications Control MOSFE.

IRFH4234PBF - Power MOSFET (International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 4.6 7.3 8.2 60 V m nC A   Applications Control MOSFET.

IRFH4251DPbF - Power MOSFET (International Rectifier)
VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) Q1 25 4.60 10 45 Q2 25 1.10 44 45 V m nC A Applications Control and Synchronou.