* Low Charge (typical 16 nC) Low RDSon (
IRFH4226PBF Datasheet (492.53 KB)
IRFH4226PBF
International Rectifier
492.53 KB
Power mosfet.
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 2.4 3.3 16
70
V m nC A
Applications
*Control M.
📁 Related Datasheet
IRFH4201 - Power MOSFET
(Infineon)
IRFH4201PbF
HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 0.95 1.25 46.0
100
V m.
IRFH4201PbF - Power MOSFET
(Infineon)
IRFH4201PbF
HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 0.95 1.25 46.0
100
V m.
IRFH4201PbF - Power MOSFET
(International Rectifier)
IRFH4201PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 nC A PQF.
IRFH4209DPBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 1.10 1.35 36
100
V m nC A
Applications Synchronous.
IRFH4210DPbF - Power MOSFET
(International Rectifier)
FastIRFET™ IRFH4210DPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 37.0 10.
IRFH4210PbF - Power MOSFET
(International Rectifier)
FastIRFET™ IRFH4210PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 245.
IRFH4213DPbF - Power MOSFET
(International Rectifier)
IRFH4213DPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 25 100 nC A PQFN 5.
IRFH4213PbF - Power MOSFET
(International Rectifier)
FastIRFET™ IRFH4213PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.35 1.90 26 204 .
