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IRFH4210PbF Datasheet (358.12 KB)
IRFH4210PbF
International Rectifier
358.12 KB
Power mosfet.
FastIRFET™ IRFH4210PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 245.
📁 Related Datasheet
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FastIRFET™ IRFH4210DPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 1.10 1.35 37.0 10.
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HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
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V m.
IRFH4201PbF - Power MOSFET
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HEXFET® Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
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25 0.95 1.25 46.0
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V m.
IRFH4201PbF - Power MOSFET
(International Rectifier)
IRFH4201PbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.25 46.0 100 nC A PQF.
IRFH4209DPBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 1.10 1.35 36
100
V m nC A
Applications Synchronous.
IRFH4226PBF - Power MOSFET
(International Rectifier)
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical)
ID (@TC (Bottom) = 25°C)
25 2.4 3.3 16
70
V m nC A
Applications
Control MOSFE.
