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IRFH8325PbF
International Rectifier
253.07 KB
Hexfet power mosfet.
IRFH8325PbF
HEXFET® Power MOSFET
VDS Vgs
max
30 ± 20 5.0 7.2 15 25
V V mΩ nC
PQFN 5X6 mm
RDS(on) .
max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ ID
(@Tc(Bottom) = 25°C)
i
A
Applications
* Synchronous MO.
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VDS Vgs
max
30 ± 20 5.0 7.2 15 25
V V mΩ nC
PQFN 5X6 mm
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ ID
(@Tc(Bot.
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VDS Vgs max RDS(on) max
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Qg typ.
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V V
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Applications
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VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30 ± 20 4.9
6.8 19.4
25i
V V
m
nC A
Applications
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VDS Vgs max RDS(on) max
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(@VGS = 4.5V)
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(@Tc(Bottom) = 25°C)
30 ± 20
4.1
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50i
V V
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Applications • Synchronous MO.
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VDS Vgs
max
30 ± 20 4.1 6.3 14 50
V V mΩ nC A
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RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
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VDSS RDS(on) max Qg (typical)
RG (typical)
ID (@TC (Bottom) = 25°C)
30 1.10 58 1.0
100
V m nC Ω
A
Applications Control MOSFET for synchronou.
