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IRFHM8337TRPBF Power MOSFET

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Description

IRFHM8337TRPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 30 12.4 17.9 5.4 18 nC A V m   D 5.

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Features

* Low Thermal Resistance to PCB (< 5.0°C/W) Low Profile (

Applications

*  System/load switch,

IRFHM8337TRPBF Distributors

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