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IRFI4905 HEXFET Power MOSFET

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Description

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist.= 4.8mm l P-Channel l Fully Avala.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRFI4905
Manufacturer
International Rectifier
File Size
112.78 KB
Datasheet
IRFI4905-InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* 60 (.102) LE AD A S SIGNME NTS 1 - GA TE 2 - DRAIN 3 - SOURCE N O T ES : 1 DIMEN SIONING & TO LERA NCING PE R ANS I Y14.5 M, 1982 2 CO NTR OLLING DIMENS ION: INCH. C D 3X 1.40 (.05 5) 1.05 (.04 2) 2 .54 (.100) 2X 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) Part Marking Information TO-220 Full

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

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