IRFPS3810 Datasheet - International Rectifier

IRFPS3810, HEXFET Power MOSFET

PD - 93912A IRFPS3810 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp.
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFPS3810_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFPS3810

Manufacturer:

International Rectifier

File Size:

111.32 KB

Description:

HEXFET Power MOSFET

Features

* 44] 0.25 [.010] S ECT ION E-E NOT ES : 1. DIMENSIONING AND T OLERANCING PER ASME Y14.5M-1994. 2. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES] 3. CONT ROLLING DIMENSION: MILLIMET ER 4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-274AA 2.35 [.092] 1.65 [.065] LEAD ASS IGNMENT S MOS FET 1 - GAT E 2

Applications

* Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse

IRFPS3810 Distributors

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IRFPS3810 HEXFET Power MOSFET International Rectifier

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