IRFPS3810PbF HEXFET Power MOSFET

International Rectifier

Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRFPS3810PbF
Manufacturer: International Rectifier
File Size: 169.57 KB
Datasheet: IRFPS3810PbF-InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* ations subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at ww

Applications

* PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.009Ω S ID = 170A Super-247™ Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Dr

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IRFPS3810PbF HEXFET Power MOSFET International Rectifier

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