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IRFPS3810PbF

HEXFET Power MOSFET

IRFPS3810PbF Features

* ations subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at ww

IRFPS3810PbF General Description

The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer.

IRFPS3810PbF Datasheet (169.57 KB)

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Datasheet Details

Part number:

IRFPS3810PbF

Manufacturer:

International Rectifier

File Size:

169.57 KB

Description:

Hexfet power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .

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IRFPS3810PbF HEXFET Power MOSFET International Rectifier

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