IRFPS3815PBF Datasheet - International Rectifier

IRFPS3815PBF, HEXFET Power MOSFET

PD - 95896 IRFPS3815PbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating .
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRFPS3815PBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRFPS3815PBF

Manufacturer:

International Rectifier

File Size:

158.00 KB

Description:

HEXFET Power MOSFET

Features

* RTERS: 233 Kansas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information. 09/04 8 www. irf. com

Applications

* www. DataSheet4U. com Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source V

IRFPS3815PBF Distributors

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IRFPS3815PBF HEXFET Power MOSFET International Rectifier

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