Datasheet Details
- Part number
- IRFPS3815
- Manufacturer
- International Rectifier
- File Size
- 106.38 KB
- Datasheet
- IRFPS3815_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET
IRFPS3815 Description
PD - 93911 IRFPS3815 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempe.
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFPS3815 Applications
* Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse
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