IRFPS3815 Datasheet - International Rectifier

IRFPS3815, HEXFET Power MOSFET

PD - 93911 IRFPS3815 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tempe.
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

datasheet Preview Page 1 from Datasheet4u.com

IRFPS3815_InternationalRectifier.pdf

IRFPS3815 Datasheet Preview — Preview of IRFPS3815 PDF

Datasheet Details

Part number:

IRFPS3815

Manufacturer:

International Rectifier

File Size:

106.38 KB

Description:

HEXFET Power MOSFET

Applications

* Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse

IRFPS3815 Distributors

📁 Related Datasheet

IRFPS30N60K IRFPS35N50L IRFPS37N50A IRFPS37N50APBF IRFPS29N60L IRFPS40N60K

📌 All Tags

IRFPS3815 HEXFET Power MOSFET International Rectifier

International Rectifier IRFPS3815-like datasheet