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IRFR3411 Power MOSFET

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Description

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.
G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si.

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Applications

* The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Max

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