IRFSL4610PBF Datasheet - International Rectifier

IRFSL4610PBF HEXFET Power MOSFET

PD - 95936B IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A S D G TO-220AB IRFB4610PbF.

IRFSL4610PBF Features

* d breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav

* f Zth

IRFSL4610PBF Datasheet (419.77 KB)