IRFTS9342PbF
International Rectifier
225.87kb
Power mosfet.
TAGS
📁 Related Datasheet
IRFTS8342PbF - Power MOSFET
(International Rectifier)
VDS
VGS
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
30 V ±20 V 19 m
29 m 4.8 nC 8.2 A
Applications System/L.
IRFT001 - (IRFT001 / IRFT002) HEXFET Power Module
(International Rectifier)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
a .D
S ta
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
IRFT002 - (IRFT001 / IRFT002) HEXFET Power Module
(International Rectifier)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
a .D
S ta
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
IRFT003 - HEXFET Power Module
(International Rectifier)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
a .D
S ta
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
IRF-24 - Inductors
(Vishay)
.vishay.
IRF-24
Vishay Dale
Inductors, Epoxy Conformal Coated, Axial Leaded
ELECTRICAL SPECIFICATIONS Inductance Range: 0.1 μH to 1000 μH Ind.
IRF-46 - Inductors Epoxy Conformal Coated
(Vishay Siliconix)
..
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special.
IRF034 - MOSFET transistor
(International Rectifier)
PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-.
IRF034 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Volt.
IRF044 - N-CHANNEL POWER MOSFET
(Seme LAB)
IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
V.
IRF044 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Volt.
