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IRFV260 TRANSISTOR N-CHANNEL

IRFV260 Description

Provisional Data Sheet No.PD-9.2002 HEXFET® TRANSISTOR IRFV260 N-CHANNEL 200Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rec.

IRFV260 Features

* n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling n Ceramic Eyelets RDS(on) 0.060Ω ID 45A
* Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continuous Drain Current IDM Pulsed Dr

IRFV260 Applications

* such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the dev

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International Rectifier IRFV260-like datasheet