IRFZ44R Datasheet (International Rectifier)

IRFZ44R, Power MOSFET

l D VDSS = 60V RDS(on) = 0.028Ω G S ID = 50 *A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HE

IRFZ44R Features

* 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 8 www.irf.com