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IRG4BC15UD-LPBF (IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR

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Description

www.DataSheet4U.com PD - 95781 IRG4BC15UD-SPbF IRG4BC15UD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoP.

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Datasheet Specifications

Part number
IRG4BC15UD-LPBF
Manufacturer
International Rectifier
File Size
341.45 KB
Datasheet
IRG4BC15UD-LPBF_InternationalRectifier.pdf
Description
(IRG4BC15UD-LPBF / IRG4BC15UD-SPBF) INSULATED GATE BIPOLAR TRANSISTOR

Features

* • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching
* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard D2Pak & TO-262 packages
* Lead-Free G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A Benefits • Best Value for Ap

Applications

* High noise immune "Positive Only" gate driveNegative bias gate drive not necessary
* For Low EMI designs- requires little or no snubbing
* Single Package switch for bridge circuit applications
* Compatible with high voltage Gate Driver IC's
* Allows simpler

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