IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR .
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

📥 Download Datasheet

IRGBC20M Datasheet Preview — Preview of IRGBC20M PDF

Datasheet Specifications

Part number: IRGBC20M
Manufacturer: International Rectifier
File Size: 159.33 KB
Datasheet: IRGBC20M-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(sat) ≤ 2.5V @VGE = 15V,

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collect

IRGBC20M Distributors

📁 Related Datasheet

IRGB4620DPbF IRGB4630DPbF IRGB4640DPbF IRG4BC20F IRG4BC20FD IRG4BC20FD-S

📌 All Tags

IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGBC20M-like datasheet