Datasheet Specifications
- Part number
- IRHN2C50SE
- Manufacturer
- International Rectifier
- File Size
- 32.41 KB
- Datasheet
- IRHN2C50SE_InternationalRectifier.pdf
- Description
- N-Channel Transistor
Description
Provisional Data Sheet No.PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (.
Features
* s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple DriIRHN2C50SE Distributors
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