IRHN2C50SE Datasheet - International Rectifier

IRHN2C50SE, N-Channel Transistor

Provisional Data Sheet No.PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (.

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Datasheet Details

Part number:

IRHN2C50SE

Manufacturer:

International Rectifier

File Size:

32.41 KB

Description:

N-Channel Transistor

Features

* s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Dri

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IRHN2C50SE N-Channel Transistor International Rectifier

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