IRHN7230 Datasheet - International Rectifier

IRHN7230, N-Channel Transistor

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PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRA

Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHN7230_InternationalRectifier.pdf