* n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VG
IRHN7250SE Datasheet (123.73 KB)
IRHN7250SE
International Rectifier
123.73 KB
Radiation hardened power mosfet.
PD - 91780B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN7250SE 200V, N-CHANNEL RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Numb.
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