www.DataSheet4U.com PD - 90819A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 500Volt, 0.45Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si).
Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
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IRHN7450 Features
* n n n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rati
IRHN7450_InternationalRectifier.pdf
Datasheet Details
IRHN7450
International Rectifier
451.67 KB
(irhn7450 / irhn8450) hexfet transistor.
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