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IRHNA7064 Datasheet - International Rectifier

IRHNA7064 - N-CHANNEL TRANSISTOR

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PD-9.1416 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHNA7064 IRHNA8064 N-CHANNEL MEGA RAD HARD 60 Volt, 0.015Ω , MEGA RAD HARD HEXFET International Rectifier ’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.

Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications

IRHNA7064 Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHNA7064_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRHNA7064

Manufacturer:

International Rectifier

File Size:

213.10 KB

Description:

N-channel transistor.

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