IRHNA7264SE Datasheet - International Rectifier

IRHNA7264SE N-CHANNEL TRANSISTOR

www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1432A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7264SE N-CHANNEL HEXFET ® TRANSISTOR SINGLE EVENT EFFECT (SEE) RAD HARD 250Volt, 0.110 Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical el.

IRHNA7264SE Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHNA7264SE Datasheet (222.60 KB)