IRHNA7160 - N-CHANNEL TRANSISTOR
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PD-9.1396 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHNA7160 IRHNA8160 N-CHANNEL MEGA RAD HARD 100 Volt, 0.045 Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specificatio
IRHNA7160 Features
* n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating
