IRHNJ3130 - N-CHANNEL MOSFET

International Rectifier

Datasheet Details

Part number	IRHNJ3130
Manufacturer	International Rectifier
File Size	257.98 KB
Description	N-CHANNEL MOSFET
Datasheet	IRHNJ3130_InternationalRectifier.pdf

n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

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Published: Oct 15, 2006 |