IRHNJ63230 Datasheet - International Rectifier

IRHNJ63230 RADIATION HARDENED POWER MOSFET

PD-96923B RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A IRHNJ67230 200V, N-CHANNEL TECHNOLOGY SMD-0.5 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90M.

IRHNJ63230 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 10

IRHNJ63230_InternationalRectifier.pdf