IRHNJ67134 Datasheet - International Rectifier

IRHNJ67134 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω ID 19A 19A IRHNJ67134 150V, N-CHANNEL TECHNOLOGY SMD-0.5 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy T.

IRHNJ67134 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 10

IRHNJ67134 Datasheet (219.25 KB)