IRHNJ64130 Datasheet - International Rectifier

IRHNJ64130 (IRHNJ6x130) MOSFET

www.DataSheet4U.com PD - 95816 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ67130 100K Rads (Si) IRHNJ63130 IRHNJ64130 300K Rads (Si) 600K Rads (Si) TM IRHNJ67130 100V, N-CHANNEL TECHNOLOGY RDS(on) 0.042Ω 0.042Ω 0.042Ω 0.042Ω ID 22A 22A 22A 22A IRHNJ68130 1000K Rads (Si) SMD-0.5 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity.

IRHNJ64130 Features

* n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 10

IRHNJ64130 Datasheet (1.92 MB)