IRHNJ7430SE Datasheet - International Rectifier

IRHNJ7430SE RADIATION HARDENED POWER MOSFET

PD - 93830B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1.77Ω IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number 4.4A JANSR2N7466U3 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellit.

IRHNJ7430SE Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V,

IRHNJ7430SE Datasheet (147.75 KB)