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IRHNJ8130, IRHNJ3130 N-CHANNEL MOSFET

IRHNJ8130 Description

www.DataSheet4U.com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Ra.

IRHNJ8130 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1

IRHNJ8130 Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as

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This datasheet PDF includes multiple part numbers: IRHNJ8130, IRHNJ3130. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRHNJ8130, IRHNJ3130
Manufacturer
International Rectifier
File Size
257.98 KB
Datasheet
IRHNJ3130_InternationalRectifier.pdf
Description
N-CHANNEL MOSFET
Note
This datasheet PDF includes multiple part numbers: IRHNJ8130, IRHNJ3130.
Please refer to the document for exact specifications by model.

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International Rectifier IRHNJ8130-like datasheet