IRHNJ3130_InternationalRectifier.pdf
Datasheet Details
Part number:
IRHNJ8130, IRHNJ3130
Manufacturer:
International Rectifier
File Size:
257.98 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: IRHNJ8130, IRHNJ3130.
Please refer to the document for exact specifications by model.
IRHNJ8130, IRHNJ3130, N-CHANNEL MOSFET
www.DataSheet4U.com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω ID 14.4A 14.4A 14.4A 14.4A IRHNJ7130 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® SMD-0.5 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This
IRHNJ8130 Features
* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1
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