IRHNJ8130, IRHNJ3130 N-CHANNEL MOSFET

International Rectifier

Description

www.DataSheet4U.com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Ra.

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IRHNJ8130 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRHNJ8130, IRHNJ3130. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRHNJ8130, IRHNJ3130
Manufacturer: International Rectifier
File Size: 257.98 KB
Datasheet: IRHNJ3130_InternationalRectifier.pdf
Description: N-CHANNEL MOSFET
Note: This datasheet PDF includes multiple part numbers: IRHNJ8130, IRHNJ3130.
Please refer to the document for exact specifications by model.

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 1

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as

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IRHNJ3130 N-CHANNEL MOSFET International Rectifier

International Rectifier IRHNJ8130-like datasheet