IRHNJC9A3130

N-CHANNEL POWER MOSFET

International Rectifier

IRHNJC9A3130 Features

* Low RDS(on)

* Fast Switching

* Single Event Effect (SEE) Hardened

* Low Total Gate Charge

* Simple Drive Requirements

* Hermetically Sealed

* Ceramic package

* Light Weight

* Surface Mount

* ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Ma

IRHNJC9A3130 General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of low RDS(on) and faster swit.

IRHNJC9A3130 Datasheet (494.02 KB)

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Datasheet Details

Part number:

IRHNJC9A3130

Manufacturer:

International Rectifier

File Size:

494.02 KB

Description:

N-channel power mosfet.
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid) PD-97911 IRHNJC9A7130 JANSR2N7648U3C 100V, N-CHANNEL R 9 REF: MIL-PRF-19500/775.

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IRHNJC9A3130 N-CHANNEL POWER MOSFET International Rectifier

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IRHNJC9A3130 Features

IRHNJC9A3130 General Description

Datasheet Details

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Description:

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