IRHNJC9A3130 Datasheet - International Rectifier

IRHNJC9A3130 N-CHANNEL POWER MOSFET

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of low RDS(on) and faster swit.

IRHNJC9A3130 Features

* Low RDS(on)

* Fast Switching

* Single Event Effect (SEE) Hardened

* Low Total Gate Charge

* Simple Drive Requirements

* Hermetically Sealed

* Ceramic package

* Light Weight

* Surface Mount

* ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Ma

IRHNJC9A3130 Datasheet (494.02 KB)

IRHNJC9A3130 Datasheet Preview — Preview of IRHNJC9A3130 PDF

Datasheet Details

Part number:

IRHNJC9A3130

Manufacturer:

International Rectifier

File Size:

494.02 KB

Description:

N-channel power mosfet.

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IRHNJC9A3130 N-CHANNEL POWER MOSFET International Rectifier

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