IRHNM597110 Datasheet, Mosfet, International Rectifier

IRHNM597110 Features

  • Mosfet n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package

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IRHNM597110

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International Rectifier

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📄 Datasheet

Description:

Radiation hardened power mosfet.

Datasheet Preview: IRHNM597110 📥 Download PDF (232.56kb)
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IRHNM597110 Application

  • Applications These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The co

TAGS

IRHNM597110
RADIATION
HARDENED
POWER
MOSFET
International Rectifier

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Stock and price

International Rectifier
POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 100V, 1.2OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Quest Components
IRHNM597110
33 In Stock
Qty : 5 units
Unit Price : $1125
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