IRHNM597110 Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

IRHNM597110, RADIATION HARDENED POWER MOSFET

PD-97179A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM597110 100K Rads (Si) 1.2Ω -3.1A IRHNM593110 300K Rads (Si) 1.2Ω -3.1A IRHNM597110 100V, P-CHANNEL 5 TECHNOLOGY SMD-0.2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combina

IRHNM597110 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID@ VGS = -12V, TC = 25°C ID@ VGS = -12V, TC =100°C IDM PD @ TC =