IRHNM57214SE Datasheet, Mosfet, International Rectifier

IRHNM57214SE Features

• Mosfet
• Single Event Effect (SEE) Hardened
• Low RDS(on)
• Low Total Gate Charge
• Simple Drive Requirements
• Ease of Paralleling
• Hermetical

PDF File Details

Part number:

IRHNM57214SE

Manufacturer:

International Rectifier

File Size:

547.51kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Sing

IRHNM57214SE Application

• Applications These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The co

TAGS

IRHNM57214SE

International Rectifier

📁 Related Datasheet

IRHNM57110 - RADIATION HARDENED POWER MOSFET (International Rectifier)
PD-97192B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number IRHNM57110 IRHNM53110 Radiation Level RDS(on) 100K Rads.

IRHNM597110 - RADIATION HARDENED POWER MOSFET (International Rectifier)
PD-97179A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM597110 100K Rads (Si) 1.

IRHN2C50SE - N-Channel Transistor (International Rectifier)
Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (.

IRHN3150 - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features .

IRHN4150 - RADIATION HARDENED POWER MOSFET (International Rectifier)
.. PD - 90720C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number IRHN7150 IRHN3150 IRHN4150 IRHN815.

IRHN7130 - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7130 Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology PD-90821D Features  Single event e.

IRHN7150 - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features .

IRHN7230 - N-Channel Transistor (International Rectifier)
.. Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRA.

IRHN7250 - Radiation Hardened Power MOSFET (International Rectifier)
IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679L Features .

IRHN7250SE - RADIATION HARDENED POWER MOSFET (International Rectifier)
PD - 91780B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN7250SE 200V, N-CHANNEL RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Numb.