IRHNS9A97260

Radiation Hardened Power MOSFET

International Rectifier

IRHNS9A97260 Features

* Single event effect (SEE) hardened (up to LET of 90.5 MeV

* cm2/mg)

* Low RDS(on)

* Improved SOA for linear mode operation

* Fast switching

* Low total gate charge

* Simple drive requirements

* Hermetically sealed

* Electrically iso

IRHNS9A97260 General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for us.

IRHNS9A97260 Datasheet (435.47 KB)

IRHNS9A97260 Datasheet Preview — Preview of IRHNS9A97260 PDF

Datasheet Details

Part number:

IRHNS9A97260

Manufacturer:

International Rectifier

File Size:

435.47 KB

Description:

Radiation hardened power mosfet.
IRHNS9A97260 (JANSR2N7666U2A) Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology PD-97990.

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IRHNS9A97260 Radiation Hardened Power MOSFET International Rectifier

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IRHNS9A97260 Features

IRHNS9A97260 General Description

Datasheet Details

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