IRHQ57214SE Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET SURFACE MOUNT

IRHQ57214SE, RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD-93881C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A IRHQ57214SE 250V, QUAD N-CHANNEL 5 TECHNOLOGY LCC-28 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects(SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combination of low R DS

IRHQ57214SE Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 1