IRHQ567110 Datasheet (International Rectifier) - (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT

IRHQ567110, (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4 # TECHNOLOGY ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω IRHQ567110 100K Rads (Si) 0.96Ω IRHQ563110 300K Rads (Si) 0.98Ω ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFET

IRHQ567110 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = ±12V, TC = 25°C ID @ VGS =