IRHQ567110 Datasheet - International Rectifier

IRHQ567110 (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4 # TECHNOLOGY ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω IRHQ567110 100K Rads (Si) 0.96Ω IRHQ563110 300K Rads (Si) 0.98Ω ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFET.

IRHQ567110 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = ±12V, TC = 25°C ID @ VGS =

IRHQ567110 Datasheet (221.93 KB)

IRHQ567110 Datasheet Preview — Preview of IRHQ567110 PDF

Datasheet Details

Part number:

IRHQ567110

Manufacturer:

International Rectifier

File Size:

221.93 KB

Description:

(irhq567110 / irhq563110) power mosfet surface mount.

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IRHQ567110 IRHQ567110 IRHQ563110 POWER MOSFET SURFACE MOUNT International Rectifier

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