IRHQ58110 Datasheet - International Rectifier

IRHQ58110 (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

www.DataSheet4U.com PD - 94211A IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A 100V, Quad N-CHANNEL RAD-Hard HEXFET ™ ® 4 # TECHNOLOGY IRHQ58110 1000K Rads (Si) LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This .

IRHQ58110 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 1

IRHQ58110 Datasheet (147.88 KB)

IRHQ58110 Datasheet Preview — Preview of IRHQ58110 PDF

Datasheet Details

Part number:

IRHQ58110

Manufacturer:

International Rectifier

File Size:

147.88 KB

Description:

(irhq5x110) radiation hardened power mosfet surface mount.

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IRHQ58110 IRHQ5x110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT International Rectifier

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