IRL1104PbF Datasheet - International Rectifier

IRL1104PbF, Power MOSFET

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistanc.

datasheet Preview Page 1 from Datasheet4u.com

IRL1104PbF-InternationalRectifier.pdf

IRL1104PbF Datasheet Preview — Preview of IRL1104PbF PDF

Datasheet Details

Part number:

IRL1104PbF

Manufacturer:

International Rectifier

File Size:

159.92 KB

Description:

Power MOSFET

Features

* IN- SOURCE 2- COLLECTOR 3- SOU4R-CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE C

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter

IRL1104PbF Distributors

📁 Related Datasheet

IRL1004 IRL1004S IRL100HS121 IRL1404 IRL1404S IRL1404Z

📌 All Tags

IRL1104PbF Power MOSFET International Rectifier

International Rectifier IRL1104PbF-like datasheet