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IRL1104S

POWER MOSFET

IRL1104S Features

* .4 9 (.6 10) 3 14 .7 3 (.5 80) 5.28 (.208) 4.78 (.188) 3X 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) -B 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 2.61 (.1 03 ) 2.32 (.0 91 ) 8.8 9 (.3 50 )

IRL1104S General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRL1104S Datasheet (192.15 KB)

Preview of IRL1104S PDF

Datasheet Details

Part number:

IRL1104S

Manufacturer:

International Rectifier

File Size:

192.15 KB

Description:

Power mosfet.
PRELIMINARY l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating.

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TAGS

IRL1104S POWER MOSFET International Rectifier

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