IRL1104S - POWER MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
IRL1104S Features
* .4 9 (.6 10) 3 14 .7 3 (.5 80) 5.28 (.208) 4.78 (.188) 3X 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) -B 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 2.61 (.1 03 ) 2.32 (.0 91 ) 8.8 9 (.3 50 )
