IRL1404PBF Datasheet - International Rectifier

IRL1404PBF Power MOSFET

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provid.

IRL1404PBF Features

* or Curent Forward Drop Ripple ≤ 5% [VDD] [ISD] www.irf.com

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs 7 IRL1404PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE

IRL1404PBF-InternationalRectifier.pdf